Growth and properties of very large crystals of semi-insulating gallium arsenide

التفاصيل البيبلوغرافية
العنوان: Growth and properties of very large crystals of semi-insulating gallium arsenide
المؤلفون: Ware, R.M., Higgins, W., O'Hearn, K., Tiernan, M.
المصدر: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 GaAs IC symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual. :54-57 1996
Relation: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078033504X
9780780335042
تدمد:10647775
DOI:10.1109/GAAS.1996.567636