دورية أكاديمية
A novel stack structure to improve the degradation of W-polycide gated MOS device with undoped a-Si/heavily-doped poly-Si multilayer
| العنوان: | A novel stack structure to improve the degradation of W-polycide gated MOS device with undoped a-Si/heavily-doped poly-Si multilayer |
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| المؤلفون: | Kan-Yuan Lee, Yean-Kuen Fang, Chii-Wen Chen, Mong-Song Liang, Jang-Cheng Hsieh |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 18(5):181-183 May, 1997 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/55.568755 |