مؤتمر
Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices
| العنوان: | Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices |
|---|---|
| المؤلفون: | Kwan-Yong Lim, Hyunjung Lee, Choongryul Ryu, Kang-Ill Seo, Uihui Kwon, Seokhoon Kim, Jongwan Choi, Kyungseok Oh, Hee-Kyung Jeon, Chulgi Song, Tae-Ouk Kwon, Jinyeong Cho, Seunghun Lee, Yangsoo Sohn, Hong Sik Yoon, Junghyun Park, Kwanheum Lee, Wookje Kim, Eunha Lee, Sang-Pil Sim, Chung Geun Koh, Sang Bom Kang, Siyoung Choi, Chilhee Chung |
| المصدر: | 2010 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2010 IEEE International. :10.1.1-10.1.4 Dec, 2010 |
| Relation: | 2010 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424474196 9781442474185 9781424474202 |
|---|---|
| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2010.5703332 |