دورية أكاديمية
Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology”
العنوان: | Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology” |
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المؤلفون: | Hook, T. B., Johnson, J. B., Cathignol, A., Cros, A., Ghibaudo, G. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 58(4):1255-1256 Apr, 2011 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/TED.2011.2104962 |