Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

التفاصيل البيبلوغرافية
العنوان: Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs
المؤلفون: Yang, J.Q., Yang, J.F., Kang, J.F., Liu, X.Y., Han, R.Q., Kirsch, P., Tseng, H.-H., Jammy, R.
المصدر: 2010 IEEE International Integrated Reliability Workshop Final Report Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International. :17-21 Oct, 2010
Relation: 2010 IEEE International Integrated Reliability Workshop (IIRW)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424485215
9781424485239
9781424485246
تدمد:19308841
23748036
DOI:10.1109/IIRW.2010.5706475