مؤتمر
Extraction of gate oxide quality and its correlation to the electrical parameters of MOS devices
العنوان: | Extraction of gate oxide quality and its correlation to the electrical parameters of MOS devices |
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المؤلفون: | Ortega, R., Molina, J., Torres, A., Landa, M., Alarcon, P., Escobar, M. |
المصدر: | 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of. :1-4 Dec, 2010 |
Relation: | 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781424499977 9781424499960 9781424499984 |
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DOI: | 10.1109/EDSSC.2010.5713676 |