Extraction of gate oxide quality and its correlation to the electrical parameters of MOS devices

التفاصيل البيبلوغرافية
العنوان: Extraction of gate oxide quality and its correlation to the electrical parameters of MOS devices
المؤلفون: Ortega, R., Molina, J., Torres, A., Landa, M., Alarcon, P., Escobar, M.
المصدر: 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of. :1-4 Dec, 2010
Relation: 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424499977
9781424499960
9781424499984
DOI:10.1109/EDSSC.2010.5713676