مؤتمر
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO2 stack gate dielectric
| العنوان: | Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO2 stack gate dielectric |
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| المؤلفون: | Xiao Zou, Xu, J. P., Lai, P. T., Yao Li, Feng Ji, Deng, L. F. |
| المصدر: | 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of. :1-4 Dec, 2010 |
| Relation: | 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424499977 9781424499960 9781424499984 |
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| DOI: | 10.1109/EDSSC.2010.5713770 |