مؤتمر
A 28 nm dual-port SRAM macro with screening circuitry against write-read disturb failure issues
| العنوان: | A 28 nm dual-port SRAM macro with screening circuitry against write-read disturb failure issues |
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| المؤلفون: | Ishii, Y., Fujiwara, H., Tanaka, S., Doguchi, T., Kuromiya, O., Chigasaki, H., Tsukamoto, Y., Nii, K., Kihara, Y., Yanagisawa, K. |
| المصدر: | 2010 IEEE Asian Solid-State Circuits Conference Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian. :1-4 Nov, 2010 |
| Relation: | 2010 IEEE Asian Solid-State Circuits Conference (A-SSCC) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424483006 9781424482986 9781424482993 |
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| DOI: | 10.1109/ASSCC.2010.5716538 |