A dual-poly (n+/p+) gate, Ti-salicide, double-metal technology for submicron CMOS ASIC and logic applications

التفاصيل البيبلوغرافية
العنوان: A dual-poly (n+/p+) gate, Ti-salicide, double-metal technology for submicron CMOS ASIC and logic applications
المؤلفون: Sun, S.W., Swenson, M., Yeargain, J.R., Lee, C.-O., Swift, C., Pfiester, J.R., Bibeau, W., Atwell, W.
المصدر: 1989 Proceedings of the IEEE Custom Integrated Circuits Conference Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989. :18.7/1-18.7/4 1989
Relation: 1989 Proceedings of the IEEE Custom Integrated Circuits Conference
قاعدة البيانات: IEEE Xplore Digital Library