Influence of annealing temperature on the performance of graphene / SiC transistors with high-k / metal gate

التفاصيل البيبلوغرافية
العنوان: Influence of annealing temperature on the performance of graphene / SiC transistors with high-k / metal gate
المؤلفون: Clavel, M., Poiroux, T., Mouis, M., Becerra, L., Thomassin, J. L, Zenasni, A., Lapertot, G., Rouchon, D., Lafond, D., Faynot, O.
المصدر: Ulis 2011 Ultimate Integration on Silicon Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on. :1-4 Mar, 2011
Relation: 2011 12th International Conference on Ultimate Integration on Silicon (ULIS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781457700897
9781457700903
9781457700910
DOI:10.1109/ULIS.2011.5757955