دورية أكاديمية

Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation

التفاصيل البيبلوغرافية
العنوان: Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
المؤلفون: Hu, V. P.-H., Fan, M.-L., Su, P., Chuang, C.-T.
المصدر: IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 12(4):524-531 Jul, 2013
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:1536125X
19410085
DOI:10.1109/TNANO.2011.2105278