High voltage trench drain LDMOS-FET using SOI wafer

التفاصيل البيبلوغرافية
العنوان: High voltage trench drain LDMOS-FET using SOI wafer
المؤلفون: Baba, Y., Yanagiya, S., Koshino, Y., Udo, Y.
المصدر: Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Power semiconductor devices and integrated circuits Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on. :183-186 1994
Relation: Proceedings of ISPSD'94 International Symposium on Power Semiconductor Devices and IC's
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780314948
9780780314948
تدمد:10636854
DOI:10.1109/ISPSD.1994.583700