New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures

التفاصيل البيبلوغرافية
العنوان: New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures
المؤلفون: Wang-Ratkovic, J., Lacoe, R.C., MacWilliams, K.P., Miryeong Song, Brown, S., Yabiku, G.
المصدر: 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Reliability physics Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International. :312-319 1997
Relation: 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780335759
9780780335752
DOI:10.1109/RELPHY.1997.584280