Removal of hydrogen from 2H::Si(100) by sputtering and recoil implantation

التفاصيل البيبلوغرافية
العنوان: Removal of hydrogen from 2H::Si(100) by sputtering and recoil implantation
المؤلفون: Tesauro, M.R., Underwood, G., Lowell, J., Campion, A.
المصدر: Proceedings of 11th International Conference on Ion Implantation Technology Ion implantation technology Ion Implantation Technology. Proceedings of the 11th International Conference on. :591-594 1996
Relation: Proceedings of 11th International Conference on Ion Implantation Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078033289X
9780780332898
DOI:10.1109/IIT.1996.586468