Endurance Prediction of Scaled NAND Flash Memory Based on Spatial Mapping of Erase Tunneling Current

التفاصيل البيبلوغرافية
العنوان: Endurance Prediction of Scaled NAND Flash Memory Based on Spatial Mapping of Erase Tunneling Current
المؤلفون: Fayrushin, Albert, Lee, ChangHyun, Park, Youngwoo, Choi, Jungdal, Choi, Jeonghyuk, Chung, Chilhee
المصدر: 2011 3rd IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2011 3rd IEEE International. :1-4 May, 2011
Relation: 2011 3rd IEEE International Memory Workshop (IMW)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781457702242
9781457702259
9781457702266
تدمد:2159483X
21594864
DOI:10.1109/IMW.2011.5873215