مؤتمر
Characterization of MOS transistors integrated on high resistivity silicon with a DSSD process
| العنوان: | Characterization of MOS transistors integrated on high resistivity silicon with a DSSD process |
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| المؤلفون: | Batignani, G., Forti, F., Giorgi, M., Rampino, G., Tritto, S., Bosisio, L., Della Marina, R. |
| المصدر: | 1996 IEEE Nuclear Science Symposium. Conference Record Nuclear science and medical imaging Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE. 1:407-411 vol.1 1996 |
| Relation: | 1996 IEEE Nuclear Science Symposium. Conference Record |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780335341 9780780335349 |
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| تدمد: | 10823654 |
| DOI: | 10.1109/NSSMIC.1996.591012 |