دورية أكاديمية
Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
| العنوان: | Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process |
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| المؤلفون: | Fu, Y.-K., Chen, B.-C., Fang, Y.-H., Jiang, R.-H., Lu, Y.-H., Xuan, R., Huang, X.-F., Lin, C.-F., Su, Y.-K., Chen, J.-F., Chang, C.-Y. |
| المصدر: | IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 23(19):1373-1375 Oct, 2011 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 10411135 19410174 |
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| DOI: | 10.1109/LPT.2011.2161276 |