Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric

التفاصيل البيبلوغرافية
العنوان:	Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric
المؤلفون:	Morassi, Luca, Verzellesi, Giovanni, Pavan, Paolo, Veksler, Dmitry, Ok, Injo, Zhao, Han, Lee, Jack C., Bersuker, Gennadi
المصدر:	IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials. :1-3 May, 2011
Relation:	2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM)
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
ردمك:	9781457717536 9783800733569
تدمد:	10928669