مؤتمر
Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 µm
| العنوان: | Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 µm |
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| المؤلفون: | Talneau, A., Chouteau, D., Mauguin, O., Largeau, L., Sagnes, I., Patriarche, G. |
| المصدر: | IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials. :1-3 May, 2011 |
| Relation: | 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781457717536 9783800733569 |
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| تدمد: | 10928669 |