TSV process optimization for reduced device impact on 28nm CMOS

التفاصيل البيبلوغرافية
العنوان: TSV process optimization for reduced device impact on 28nm CMOS
المؤلفون: Yu, C.L., Chang, C.H., Wang, H.Y., Chang, J.H., Huang, L.H., Kuo, C.W., Tai, S.P., Hou, S.Y., Lin, W.L., Liao, E.B., Yang, K.F., Wu, T.J., Chiou, W.C., Tung, C.H., Jeng, S.P., Yu, C.H.
المصدر: 2011 Symposium on VLSI Technology - Digest of Technical Papers VLSI Technology (VLSIT), 2011 Symposium on. :138-139 Jun, 2011
Relation: 2011 IEEE Symposium on VLSI Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424499496
9784863481664
تدمد:07431562
21589682