Variability analysis of scaled poly-Si channel FinFETs and tri-gate flash memories for high density and low cost stacked 3D-memory application

التفاصيل البيبلوغرافية
العنوان: Variability analysis of scaled poly-Si channel FinFETs and tri-gate flash memories for high density and low cost stacked 3D-memory application
المؤلفون: Liu, Y. X., Mastukawa, T., Endo, K., Oruchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Sakamoto, K., Masahara, M., Kamei, T., Hayashida, T., Ogura, A.
المصدر: 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European. :203-206 Sep, 2011
Relation: ESSDERC 2011 - 41st European Solid State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781457707063
9781457707070
9781457707087
تدمد:19308876
23786558
DOI:10.1109/ESSDERC.2011.6044199