مؤتمر
Development of InAlN/GaN HEMTs Power Devices in S-Band
| العنوان: | Development of InAlN/GaN HEMTs Power Devices in S-Band |
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| المؤلفون: | Piotrowicz, S., Chartier, E., Jardel, O., Dufraisse, J., Callet, G., Jacquet, J.-C., Lancereau, D., Morvan, E., Aubry, R., Sarazin, N., Dua, C., Oualli, M., Di-Forte Poisson, M. A., Delage, S. L. |
| المصدر: | 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE. :1-4 Oct, 2011 |
| Relation: | 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781612847108 9781612847115 9781612847122 |
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| تدمد: | 15508781 23748443 |
| DOI: | 10.1109/CSICS.2011.6062455 |