مؤتمر
Study of black silicon obtained by deep reactive ion etching - approach to achieving the hot spot of a thermoelectric energy harvester
| العنوان: | Study of black silicon obtained by deep reactive ion etching - approach to achieving the hot spot of a thermoelectric energy harvester |
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| المؤلفون: | Nguyen, K.N, Abi-Saab, D., Malak, M., Basset, P., Richalot, E., Pavy, N., Flourens, F., Marty, F., Angelescu, D., Leprince-Wang, Y., Bourouina, T. |
| المصدر: | 2011 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP) Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2011 Symposium on. :81-84 May, 2011 |
| Relation: | 2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781612849058 9782355000140 9782355000157 |
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