مؤتمر
A Shallow-'ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process
| العنوان: | A Shallow-'ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process |
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| المؤلفون: | Murtaza, S.S., Chatterjee, A., Mei, P., Amerasekera, A., Nicollian, P., Kittl, J., Breedijk, T., Hanratty, M., Nag, S., Ali, I., Rogers, D., Chen, I.-C. |
| المصدر: | Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on. :133-137 1997 |
| Relation: | International Symposium on VLSI Technology, Systems, and Applications |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780341317 9780780341319 |
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| تدمد: | 1524766X |
| DOI: | 10.1109/VTSA.1997.614744 |