دورية أكاديمية
Are Interface State Generation and Positive Oxide Charge Trapping Under Negative-Bias Temperature Stressing Correlated or Coupled?
| العنوان: | Are Interface State Generation and Positive Oxide Charge Trapping Under Negative-Bias Temperature Stressing Correlated or Coupled? |
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| المؤلفون: | Ho, T. J. J., Ang, D. S., Boo, A. A., Teo, Z. Q., Leong, K. C. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 59(4):1013-1022 Apr, 2012 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2012.2185243 |