Lifetime studies of 130nm nMOS transistors intended for long-duration, cryogenic high-energy physics experiments

التفاصيل البيبلوغرافية
العنوان: Lifetime studies of 130nm nMOS transistors intended for long-duration, cryogenic high-energy physics experiments
المؤلفون: Hoff, J. R., Arora, R., Cressler, J.D., Deptuch, G. W., Gui, P., Lourenco, N.E., Wu, G., Yarema, R. J.
المصدر: 2011 IEEE Nuclear Science Symposium Conference Record Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE. :685-693 Oct, 2011
Relation: 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference (2011 NSS/MIC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467301183
9781467301190
9781467301206
تدمد:10823654
DOI:10.1109/NSSMIC.2011.6154083