Resistive switching behaviors of the ZnO/SiOx/ZnO tri-layer for nonvolatile memory devices

التفاصيل البيبلوغرافية
العنوان: Resistive switching behaviors of the ZnO/SiOx/ZnO tri-layer for nonvolatile memory devices
المؤلفون: Youngill Kim, Eunkyeom Kim, Jaekyu Jeong, Kyoungwan Park
المصدر: 2011 IEEE Nanotechnology Materials and Devices Conference Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE. :384-385 Oct, 2011
Relation: 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781457721397
9781457721403
9781457721410
DOI:10.1109/NMDC.2011.6155383