Zinc diffusion process for GaAs/sub 0.6/P/sub 0.4/ red light emitting diode fabrication in an undergraduate laboratory

التفاصيل البيبلوغرافية
العنوان: Zinc diffusion process for GaAs/sub 0.6/P/sub 0.4/ red light emitting diode fabrication in an undergraduate laboratory
المؤلفون: Lawrence, D.J., Heineman, D.L.
المصدر: Proceedings of the UGIM Symposium, Microelectronics Education for the Future. Twelfth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.97CH36030) Microelectronics University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial. :169-172 1997
Relation: Proceedings of the UGIM Symposium, Microelectronics Education for the Future. Twelfth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.97CH36030)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780337905
9780780337909
تدمد:07496877
DOI:10.1109/UGIM.1997.616718