مؤتمر
Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor
| العنوان: | Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor |
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| المؤلفون: | Kobayashi, J.T., Kobayashi, N.P., Dapkus, P.D., Zhang, X., Rich, D.H. |
| المصدر: | 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application LEOS Summer topical meetings Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi. :10 1997 |
| Relation: | 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078033891X 9780780338913 |
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| DOI: | 10.1109/LEOSST.1997.619238 |