An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices

التفاصيل البيبلوغرافية
العنوان: An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices
المؤلفون: Park, Byoungjun, Cho, Sunghoon, Park, Jiyul, Kim, Pyunghwa, Lee, Sangjo, Park, Milim, Park, Min Sang, Park, Sukkwang, Yang, Hae Chang, Park, Sungjo, Lee, Yunbong, Cho, Myoung Kwan, Ahn, Kun-Ok, Bae, Gihyun, Park, Sungwook
المصدر: 2012 4th IEEE International Memory Workshop Memory Workshop (IMW), 2012 4th IEEE International. :1-4 May, 2012
Relation: 2012 4th IEEE International Memory Workshop (IMW)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467310796
9781467310819
تدمد:2159483X
21594864
DOI:10.1109/IMW.2012.6213622