دورية أكاديمية
Analysis of Phosphorus-Doped Silicon Oxide Layers Deposited by Means of PECVD as a Dopant Source in Diffusion Processes
| العنوان: | Analysis of Phosphorus-Doped Silicon Oxide Layers Deposited by Means of PECVD as a Dopant Source in Diffusion Processes |
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| المؤلفون: | Fallisch, A., Wagenmann, D., Keding, R., Trogus, D., Hofmann, M., Rentsch, J., Reinecke, H., Biro, D. |
| المصدر: | IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 2(4):450-456 Oct, 2012 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 21563381 21563403 |
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| DOI: | 10.1109/JPHOTOV.2012.2200455 |