دورية أكاديمية
The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs
| العنوان: | The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs |
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| المؤلفون: | Sun, J.J., Bartholomew, R.F., Bellur, K., Srivastava, A., Osburn, C.M., Masnari, N.A. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 44(9):1491-1498 Sep, 1997 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/16.622606 |