مؤتمر
1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device
| العنوان: | 1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device |
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| المؤلفون: | Hwang, Injun, Choi, Hyoji, Lee, JaeWon, Choi, Hyuk Soon, Kim, Jongseob, Ha, Jongbong, Um, Chang-Yong, Hwang, Sun-Kyu, Oh, Jaejoon, Kim, Jun-Youn, Shin, Jai Kwang, Park, Youngsoo, Chung, U-in, Yoo, In-Kyeong, Kim, Kinam |
| المصدر: | 2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :41-44 Jun, 2012 |
| Relation: | 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781457715969 9781457715945 9781457715976 |
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| تدمد: | 1943653X 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2012.6229018 |