مؤتمر
0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs
| العنوان: | 0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs |
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| المؤلفون: | Chou, Hsueh-Liang, Su, P. C., Ng, J. C. W., Wang, P. L., Lu, H. T., Lee, C. J., Syue, W. J., Yang, S. Y., Tseng, Y. C., Cheng, C. C., Yao, C. W., Liou, R. S., Jong, Y. C., Tsai, J. L., Cai, Jun, Tuan, H. C., Huang, Chih-Fang, Gong, Jeng |
| المصدر: | 2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :401-404 Jun, 2012 |
| Relation: | 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781457715969 9781457715945 9781457715976 |
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| تدمد: | 1943653X 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2012.6229106 |