مؤتمر
A Novel 1b Trench DRAM Cell With Raised Shallow Trench Isolation (RSTI)
| العنوان: | A Novel 1b Trench DRAM Cell With Raised Shallow Trench Isolation (RSTI) |
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| المؤلفون: | Alsmeier, J., Kelleher, K.H., Beintner, J., Haensch, W., Mandelman, J.A., Hoh, P., Ninomiya, Y.L., Srinivasan, S., Bronner, G. |
| المصدر: | 1997 Symposium on VLSI Technology VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on. :19-20 1997 |
| Relation: | 1997 Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 4930813751 9784930813756 |
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| DOI: | 10.1109/VLSIT.1997.623674 |