مؤتمر
Effects of gate process on NBTI characteristics of TiN gate FinFET
| العنوان: | Effects of gate process on NBTI characteristics of TiN gate FinFET |
|---|---|
| المؤلفون: | Kim, Jin Ju, Moonju Cho, Pantisano, Luigi, Chiarella, Thomas, Togo, Mitsuhiro, Horiguchi, Naoto, Groeseneken, Guido, Lee, Byoung Hun |
| المصدر: | 2012 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2012 IEEE International. :GD.6.1-GD.6.4 Apr, 2012 |
| Relation: | 2012 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder كن أول من يترك تعليقا!