مؤتمر
High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain
| العنوان: | High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain |
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| المؤلفون: | Liu, Bin, Gong, Xiao, Han, Genquan, Lim, Phyllis Shi Ya, Tong, Yi, Zhou, Qian, Yang, Yue, Daval, Nicolas, Pulido, Matthieu, Delprat, Daniel, Nguyen, Bich-Yen, Yeo, Yee-Chia |
| المصدر: | 2012 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2012 IEEE. :1-2 Jun, 2012 |
| Relation: | 2012 IEEE Silicon Nanoelectronics Workshop (SNW) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467309950 9781467309967 9781467309974 |
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| تدمد: | 21614636 21614644 |
| DOI: | 10.1109/SNW.2012.6243323 |