High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process

التفاصيل البيبلوغرافية
العنوان: High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process
المؤلفون: Campbell, Charles F., Ming-Yih Kao, Nayak, Sabyasachi
المصدر: 2012 IEEE/MTT-S International Microwave Symposium Digest Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. :1-3 Jun, 2012
Relation: 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467310864
9781467310857
9781467310871
9781467310888
تدمد:0149645X
DOI:10.1109/MWSYM.2012.6259444