مؤتمر
High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process
العنوان: | High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process |
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المؤلفون: | Campbell, Charles F., Ming-Yih Kao, Nayak, Sabyasachi |
المصدر: | 2012 IEEE/MTT-S International Microwave Symposium Digest Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. :1-3 Jun, 2012 |
Relation: | 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012 |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781467310864 9781467310857 9781467310871 9781467310888 |
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تدمد: | 0149645X |
DOI: | 10.1109/MWSYM.2012.6259444 |