Developing the Ka-band GaN power HEMT devices

التفاصيل البيبلوغرافية
العنوان: Developing the Ka-band GaN power HEMT devices
المؤلفون: Zhou, J. J., Dong, X., Kong, C., Kong, Y. C., Ren, C. J., Li, Z. H., Chen, T. S., Chen, C., Zhang, B.
المصدر: Proceedings of 2012 5th Global Symposium on Millimeter-Waves Millimeter Waves (GSMM), 2012 5th Global Symposium on. :617-620 May, 2012
Relation: 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467313025
9781467313049
9781467313056
DOI:10.1109/GSMM.2012.6314414