دورية أكاديمية
Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift
العنوان: | Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift |
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المؤلفون: | Takashino, H., Tanizawa, M., Okagaki, T., Hayashi, T., Taya, M., Ishida, H., Ishikawa, K., Inoue, Y. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 59(12):3199-3204 Dec, 2012 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/TED.2012.2217499 |