دورية أكاديمية
Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift
| العنوان: | Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift |
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| المؤلفون: | Takashino, H., Tanizawa, M., Okagaki, T., Hayashi, T., Taya, M., Ishida, H., Ishikawa, K., Inoue, Y. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 59(12):3199-3204 Dec, 2012 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2012.2217499 |