160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management

التفاصيل البيبلوغرافية
العنوان: 160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
المؤلفون: Piotrowicz, S., Jardel, O., Jacquet, J.-C., Lancereau, D., Aubry, R., Morvan, E., Sarazin, N., Dufraisse, J., Dua, C., Oualli, M., Chartier, E., Poisson, M. A. Di-Forte, Gaquière, C., Delage, S. L.
المصدر: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE. :1-4 Oct, 2012
Relation: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467309288
9781467309271
9781467309295
تدمد:15508781
23748443
DOI:10.1109/CSICS.2012.6340059