Source-drain scaling of ion-implanted InAs/AlSb HEMTs

التفاصيل البيبلوغرافية
العنوان: Source-drain scaling of ion-implanted InAs/AlSb HEMTs
المؤلفون: Moschetti, G., Nilsson, P.-A., Hallen, A., Desplanque, L., Wallart, X., Grahn, J.
المصدر: 2012 International Conference on Indium Phosphide and Related Materials Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. :57-60 Aug, 2012
Relation: 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467317252
9781467317238
9781467317245
تدمد:10928669
DOI:10.1109/ICIPRM.2012.6403318