Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)

التفاصيل البيبلوغرافية
العنوان: Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)
المؤلفون: Kai, Liu, Kailiang, Zhang, Fang, Wang, Jinshi, Zhao, Jun, Wei
المصدر: 2013 IEEE 5th International Nanoelectronics Conference (INEC) Nanoelectronics Conference (INEC), 2013 IEEE 5th International. :306-308 Jan, 2013
Relation: 2013 IEEE International Nanoelectronics Conference (INEC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467348416
9781467348409
9781467348423
تدمد:21593523
21593531
DOI:10.1109/INEC.2013.6466031