مؤتمر
Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification
| العنوان: | Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification |
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| المؤلفون: | Md. Shafayat Hossain, Saeed Uz Zaman Khan, Md. Obaidul Hossen, Fahim Ur Rahman, Zaman, Rifat, Khosru, Quazi D. M. |
| المصدر: | 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on. :1-3 Dec, 2012 |
| Relation: | 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467356947 9781467356954 9781467356961 |
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| DOI: | 10.1109/EDSSC.2012.6482770 |