Si-capping thicknesses impacting compressive strained MOSFETs with temperature effect

التفاصيل البيبلوغرافية
العنوان: Si-capping thicknesses impacting compressive strained MOSFETs with temperature effect
المؤلفون: Wang, Mu-Chun, Peng, Ssu-Hao, Wang, Shea-Jue, Yang, Hsin-Chia, Liao, Wen-Shiang, Li, Chao-Wang, Liu, Chuan-Hsi
المصدر: 2013 International Symposium on Next-Generation Electronics Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on. :361-364 Feb, 2013
Relation: 2013 International Symposium on Next-Generation Electronics (ISNE)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467330367
9781467330350
9781467330374
DOI:10.1109/ISNE.2013.6512367