دورية أكاديمية
Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing
| العنوان: | Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing |
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| المؤلفون: | Park, S. Y., Song, J. H., Lee, C.-K., Son, B. G., Kim, H. J., Choi, R., Choi, Y. J., Kim, U. K., Hwang, C. S., Jeong, J. K. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(7):894-896 Jul, 2013 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2013.2259574 |