دورية أكاديمية
High-Performance Gate-All-Around Poly-Si Thin-Film Transistors by Microwave Annealing With NH $_{\rm 3}$ Plasma Passivation
| العنوان: | High-Performance Gate-All-Around Poly-Si Thin-Film Transistors by Microwave Annealing With NH $_{\rm 3}$ Plasma Passivation |
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| المؤلفون: | Yeh, M.-S., Lee, Y.-J., Hung, M.-F., Liu, K.-C., Wu, Y.-C. |
| المصدر: | IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 12(4):636-640 Jul, 2013 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 1536125X 19410085 |
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| DOI: | 10.1109/TNANO.2013.2265778 |