Electromigration reliability of Mn-doped Cu interconnects for the 28 nm technology

التفاصيل البيبلوغرافية
العنوان: Electromigration reliability of Mn-doped Cu interconnects for the 28 nm technology
المؤلفون: Cao, Linjun, Ho, Paul S., Justison, Patrick
المصدر: 2013 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2013 IEEE International. :EM.5.1-EM.5.4 Apr, 2013
Relation: 2013 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479901111
9781479901128
9781479901135
تدمد:15417026
19381891
DOI:10.1109/IRPS.2013.6532080