دورية أكاديمية
Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length
| العنوان: | Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length |
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| المؤلفون: | Barraud, S., Coquand, R., Hartmann, J.-M., Maffini-Alvaro, V., Samson, M.-P., Tosti, L., Allain, F. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(9):1103-1105 Sep, 2013 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2013.2274172 |