Si nanowire field effect transistors: Effect of gamma radiation treatment

التفاصيل البيبلوغرافية
العنوان: Si nanowire field effect transistors: Effect of gamma radiation treatment
المؤلفون: Vitusevich, S., Li, J., Pud, S., Offenhaeusser, A., Petrychuk, M., Danilchenko, B.
المصدر: 2013 22nd International Conference on Noise and Fluctuations (ICNF) Noise and Fluctuations (ICNF), 2013 22nd International Conference on. :1-4 Jun, 2013
Relation: 2013 International Conference on Noise and Fluctuations (ICNF)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479906680
9781479906710
DOI:10.1109/ICNF.2013.6578946